Wang Gang, male, born in November 1968. He is currently a professor at the School of Physical Science and Engineering, Sun Yat-Sen University, and a doctoral tutor.
In August 1991, he graduated from the Department of Electronic Science of Jilin University with a bachelor's degree in semiconductor physics and devices. After graduation, he worked in Dalian Yuanguang Electronics Co., Ltd. (Dalian Development Zone, China), a joint venture between China and South Korea. He is mainly responsible for R&D and production line transformation of semiconductor light-emitting diodes (LEDs).
In April 1994, he went to Japan to study at the National Nagoya Institute of Technology at his own expense. He studied at the school's electrical information engineering (EE), studied under Professor Shen Baoxiao, and obtained a master's degree in engineering in March 1998. He obtained his doctorate in engineering in March 2001. . During this period, he was mainly engaged in the research of MOCVD growth and fabrication of related optoelectronic devices with GaAs-based, GaN-based and other III-V compound semiconductor materials. During his Ph.D., he was also hired as a Research Assistant (RA) and Teaching Assistant (TA) to guide undergraduate and postgraduate graduation studies.
From April 2001 to April 2004, he worked at Fujitsu Quantum Devices Co., Ltd. (Kofu, Japan), the world's largest manufacturer of compound semiconductors. During this period, I mainly engaged in chip and module design of InP-based photodetectors for 10Gp/s, 40Gp/s ultra-high-speed optical communication systems, and research and development work in mass production.
Since May 2004, I have been employed as one of the two talents of the “Hundred Talents Program†of Sun Yat-sen University. I have been employed by the State Key Laboratory of Photoelectric Materials and Technology of Sun Yat-sen University, and I am engaged in research and teaching of photovoltaic compound semiconductor materials and related component mechanisms.
Main research directions:
Optical Engineering, research direction: Photoelectric compound semiconductor materials and device preparation technology. include:
Research on ultra-high speed semiconductor photodetectors for 10/40 Gbps optical communication systems;
Research on novel solid-state nanoelectronic devices for THz emission and detection;
High-power white LED package for solid-state lighting and its chip preparation technology research;
Research on III-V compound semiconductor material MOCVD epitaxial growth technology.
Main position:
Member of Academic Committee of Sun Yat-Sen University (Science)
Head of optical information science and technology course system
Assistant Director, State Key Laboratory of Optoelectronic Materials and Technology, Sun Yat-sen University
Director, Semiconductor Lighting System Research Center, Sun Yat-Sen University
Undertake the subject:
Sun Yat-sen University's “Hundred Talents Program†introduced the talent research start-up project at the second level;
School-level key projects of Zhongshan University;
Guangdong Science and Technology Plan Project;
Guangdong Provincial Natural Science Foundation Project;
Guangzhou Science and Technology Plan Project;
Foshan Chancheng District Industry-University-Research Cooperation Project.
Published papers:
1.G. Yu, G. Wang, H. Ishikawa, M. Umeno, T. Soga, T. Egawa, J. Watanabe and T. Jimbo: “Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78 ? C 4.77 eV) by spectroscopic ellipsometry and the optical transmission methodâ€, Appl. Phys. Lett., 70, 3209 - 3211 (1997).
2.G. Wang, GY Zhao, T. Soga, T. Jimbo and M. Umeno: “Effects of H plasma passivation on the optical and electrical properties of GaAs-on-Siâ€, Jpn. J. Appl. Phys., 37, L1280 ?C L1282 (1998).
3.G. Wang, M. Kawai, K. Ohtsuka, T. Soga, T. Jimbo and M. Umeno: “H plasma passivation of MOCVD grown GaAs-on-Si for high efficiency solar cellsâ€, Proceedings of the 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion, (Vienna, Austria, 1998) European Commission, 3733 ?C 3736, (1999).
4.G. Wang, T. Soga, T. Jimbo and M. Umeno: “A novel hydrogen passivation method for GaAs on Si grown by MOCVDâ€, COMPOUND SEMICONDUCTORS 1998, INSTITUTE OF PHYSICS CONFERENCE SERIES, 162, 597-602 (1999 ).
5.G. Wang, K. Ohtsuka, T. Soga, T. Jimbo and M. Umeno: “Hydrogen plasma passivation and improvement of the photovoltaic properties of a GaAs solar cell grown on Si substrateâ€, Jpn. J. Appl. Phys ., 38, 3504 ?C 3505 (1999).
6.G. Wang, T. Ogawa, K. Ohtsuka, GY Zhao, T. Soga T. Jimbo and M. Umeno: “Photoluminescence studies of hydrogen-passivated Al0.13Ga0.87As grown on Si substrate by metalorganic chemical vapor deposition†Jpn. J. Appl. Phys., 38, L796 ?C L798 (1999).
7.G. Wang, T. Ogawa, T. Soga, T. Jimbo and M. Umeno: “Surface and bulk passivation of GaAs solar cell on Si substrate by H2+PH3 plasmaâ€, Appl. Phys. Lett., 76, 730 ?C 732 (2000).
8.T. Soga, G. Wang, K. Ohtsuka, T. Jimbo and M. Umeno: “Hydrogen plasma passivation for GaAs solar cell on Si substrateâ€, J. Appl. Phys., 87, 2285 ?C 2288 (2000 ).
9.G. Wang, K. Otsuka, T. Ogawa, T. Soga, T. Jimbo and M. Umeno: “A detailed study of H plasma passivation effect on GaAs-on-Si solar cellâ€, Solar Energy Material and Solar Cell, 66, 599 ?C 605 (2001).
10.K. Akahori, G. Wang, K. Okumura, T. Soga, T. Jimbo and M. Umeno: “Improvement of the MOCVD-grown InGaP on Si substrate towards high efficiency solar cellâ€, Solar Energy Material and Solar Cell , 66, 593 ?C 598 (2001).
11.G. Wang, T. Ogawa, T. Soga, T. Egawa, T. Jimbo and M. Umeno: “Hydrogenation of GaAs-on-Si Schottky diodes by PH3-added plasmaâ€, Appl. Sur. Sci., 159/160, 191 ?C 196 (2000).
12.G. Wang, T. Ogawa, T. Soga, T. Egawa, T. Jimbo and M. Umeno: “PH3/H2 plasma passivation of metalorganic chemical vapor deposition grown GaAs on Siâ€, J. Appl. Phys., 88, 3689 ?C 3694 (2000).
13.G. Wang, T. Ogawa, T. Soga, T. Jimbo and M. Umeno: “Surface and bulk passivation of defects in GaAs/Si by RF plasma-assisted MOCVDâ€, J. Cryst. Growth, 221, 172 -176 (2000).
14.G. Wang, T. Soga, T. Egawa, T. Jimbo and M. Umeno: “Enhanced spontaneous emission in hydrogen-plasma-passivated AlGaAs/GaAs vertical-cavity surface-emitting laser structures grown on Si substrateâ€, Electron Lett., 36, 1462 ?C 1464, (2000).
15.G. Wang, T. Ogawa, F. Kunimasa, M. Umeno T. Soga, T. Jimbo and T. Egawa: “Hydrogen plasma passivation of bulk GaAs and Al0.3Ga0.7As/GaAs multiple-quantum-well structures On Si substrates", J. Electron. Mater., 30, 845 ?C 849 (2001).
16.T. Ogawa, G. Wang, K. Murase, K. Hori, J. Arokiaraj, T. Soga, T. Jimbo and M. Umeno: “Phosphine-added hydrogen plasma passivation of GaAs solar cell on Si substrateâ€, IEEE Record of the Twenty-eighth Photovoltaic Specialist Conference, 1308 ?C 1311 (2000).
17.G. Wang, K. Akahori, T. Soga, T. Jimbo and M. Umeno:: "Investigation of electrical and optical properties of phosphine/hydrogen plasma exposed In0.49Ga0.51P grown on Si substrate", Jpn. J Appl. Phys., 40, L189 ?C 191 (2001).
18.G. Wang, T. Ogawa, K. Murase, K. Hori, T. Soga, BJ Zhang, GY Zhao, H. Ishikawa, T. Egawa, T. Jimbo and M. Umeno: “Passivation of bulk and surface Defects in GaAs grown on Si substrate by radio frequency phosphine/hydrogen plasma exposure", Jpn. J. Appl. Phys., 40, 4781 ?C 4784 (2001).
19.G. Wang, T. Ogawa, T. Soga, T. Jimbo and M. Umeno: “Passivaton of dislocations in GaAs grown on Si substrates by phosphine (PH3) plasma exposureâ€, Appl. Phys. Lett., 78, 3463 ?C 3465 (2001).
20.G. Wang, T. Tokumitsu, I. Hanawa, K. Sato and M. Kobayashi: "Analysis of high speed PIN photodiodes S-parameters by a novel small-signal equivalent circuit model", IEEE Microwave and Wireless Components Letters, 12, 378 ?C 380 (2002).
21.G. Wang, T. Tokumitsu, I. Hanawa, Y. Yoneda, K. Sato and M. Kobayashi: "A time-delay equivalent circuit model of ultra-fast PIN photodiodes", IEEE Transactions on Microwave Theory and Techniques, 51, 1227 - 1233 (2003).
22.G. Wang, M. Takechi, K. Araki, T. Tokumitsu, I. Hanawa, Y. Yoneda, K. Sato and M. Kobayashi: “Wide bandwidth, high performance waveguide-integrated PIN photodiodes for 40 Gbits/s Receiver modules", 2003 IEEE MTT-S Digest, 151 ?C 154 (2003).
23.G. Wang, I. Hanawa, H. Aono, Y. Yoneda, T. Fujii, K. Sato and M. Kobayashi: “Highly reliable high performance waveguide-integrated InP/InGaAs pin photodiodes for 40 Gbit/s fiber- Optical communication applicationâ€, Electron. Lett., 39, 1147 ?C 1149 (2003).
Publishing books:
1, "Electronic Devices" (Shao Chunlin, Wang Gang translation) Science Press, March 2001, the first edition.
2, "GaAs field effect transistor base (Wang Gang translation) China Petrochemical Press, August 2005 first edition.
Cooperative publication:
1. "Semiconductor light-receiving device" Wang Gang and Mi Tianchang Bote 2002-274304 (proposed on September 20, 2002).
2, "Semiconductor light-receiving device" Wang Gang, Mi Tianchang Bote is willing to 2002-274305 (September 20, 2002).
Awards:
Fujitsu Quantum Devices Co., Ltd. Paper of the Year (2003)
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